| PART |
Description |
Maker |
| 2N3700HR |
Hi-Rel NPN bipolar transistor
|
STMicroelectronics
|
| 2N3700HR |
Hi-Rel 80 V - 1 A NPN bipolar transistor
|
STMicroelectronics
|
| 2N3700RHRT 2N3700RHRG 2N3700HRT J2N3700UB1 2N3700R |
Hi-Rel NPN bipolar transistor 80 V, 1 A
|
ST Microelectronics
|
| 2N5401HR |
Hi-Rel PNP bipolar transistor 150 V - 0.5 A
|
STMicroelectronics
|
| IRGIH50F |
1200V DISCRETE Hi-Rel IGBT in a TO-259AA package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRGMC30U |
600V DISCRETE Hi-Rel IGBT in a TO-254AA package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| BUL146FG BUL146G |
Bipolar Power TO220FP NPN 6A 400V; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 6 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
SWITCHMODE NPN Bipolar Power Transistor
|
ON Semiconductor
|
| 2N3440S |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
|
SEME-LAB[Seme LAB]
|
| AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-310 |
TERM BLOCK HDR 5.08MM 3POS PCB
Low Current/ High Performance NPN Silicon Bipolar Transistor
Low Current High Performance NPN Silicon Bipolar Transistor
Low Current, High Performance NPN Silicon Bipolar Transistor
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| 2N3109 2N3109E4 |
1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Bipolar NPN Device
|
SEMELAB LTD
SEME-LAB
|
| BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3
Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
|
Semelab
|
