| PART |
Description |
Maker |
| CLE331W |
Aluminum Gallium Arsenide IRED Point Source Die
|
Clairex Technologies, Inc
|
| CLE320W |
High Power Aluminum Gallium Arsenide 810nm IRED
|
Clairex Technologies, Inc
|
| CLE234E |
Very High Output Aluminum Gallium Arsenide Quad chip IRED Array
|
Clairex Technologies, Inc
|
| CLE100F |
Gallium Arsenide IRED Flat Lead PLCC Package
|
Clairex Technologies, Inc
|
| L680 DGSK8-025A DGS3-025AS DGS4-025A |
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| CLE435 |
Red LED, Aluminum Gallium Arsenide Dome Lens Can, Hermetically Sealed
|
Clairex Technologies, Inc
|
| MGR1018_D ON1879 MGR1018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MGRB2018CT_D ON1883 MGRB2018CT MGRB2018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| DGSK32-018CS DGS15-018CS |
Gallium Arsenide Schottky Rectifier Second generation
Gallium Arsenide Schottky Rectifier Second generation 24 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| TLP595G |
The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET
|
Toshiba Semiconductor
|
| OH10011 |
Gallium Arsenide Devices
|
Panasonic
|
