| PART |
Description |
Maker |
| IS66WVE1M16BLL-55BLI IS66WVE1M16BLL-70BLI |
3.0V Core Async/Page PSRAM
|
Integrated Silicon Solution, Inc
|
| HM65W8512 |
4 M PSRAM (512-kword ×8-bit)(4 M PSRAM (512k×8) 4个M移动存储芯片12 KWord的8位）个M移动存储芯片（为512k字8位）
|
Hitachi,Ltd.
|
| A420616S-50 A420616V-50 A420616V-45U A420616V-50U |
VGA VIDEO CABLE W/ FERRITE CORE,75 FT, MF
VGA VIDEO CABLE W/ FERRITE CORE,100FT, FF
1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
http://
AMIC Technology Corporation
|
| U07-17 U07-24 U07-38 U07-19 PSC10-19 PSC10-D-11 PS |
1 ELEMENT, 175000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 600000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7200000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 240000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 120000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 430000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 50000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 72000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1500000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7200 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 36000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1200000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 6000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 17500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 360000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 86000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
|
|
| CY7C149-25PC CY7C149-45PC |
Memory : Async SRAMs
|
Cypress
|
| AM70PDL127CDH AM70PDL127CDH85I AM70PDL129CDH85I AM |
2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
|
AMD[Advanced Micro Devices]
SPANSION[SPANSION]
|
| 0603HP-3N6XGLU 0603HP-91NXJLU 0603HP-91NXGLW 0603H |
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.0036 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.091 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.091 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.036 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.036 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.2 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.2 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.21 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.01 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.01 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.0095 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.15 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.0075 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.0075 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.043 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.22 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.22 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.039 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.0039 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.0056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.023 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.024 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.0043 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.0022 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0072 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.022 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Coilcraft, Inc.
COILCRAFT INC
|
| M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
|
