| PART |
Description |
Maker |
| RA08N1317M10 RA08N1317M-101 |
135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO
135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
| RA07M1317MSA10 |
135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA07M1317MSA-101 |
135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA08N1317M_06 RA08N1317M RA08N1317M-101 RA08N1317M |
RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA30H1317M111 RA30H1317M1-201 |
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA30H1317M1 RA30H1317M1-101 |
RF MOSFET MODULE 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA60H1317M RA60H1317M-101 RA60H1317M11 |
RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
Broadband Frequency Range
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| ST083S10PFH2PBF ST083S04PCN1PBF ST083S08PCN1L ST08 |
135 A, 1000 V, SCR, TO-208AD
135 A, 400 V, SCR, TO-209AC
135 A, 800 V, SCR, TO-209AC
135 A, 1200 V, SCR, TO-209AC
|
|
| D1210UK D1210 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-175MHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| ADP121-ACBZ29R7 ADP121-ACBZ30R7 ADP121-ACBZ33R7 AD |
2.775 V FIXED POSITIVE LDO REGULATOR, 0.135 V DROPOUT, PBGA4
150 mA, Low Quiescent Current, CMOS Linear Regulator
1.6 V FIXED POSITIVE LDO REGULATOR, 0.135 V DROPOUT, PBGA4 0.40 MM PITCH, ROHS COMPLIANT, WLCSP-4
1.55 V FIXED POSITIVE LDO REGULATOR, 0.135 V DROPOUT, PBGA4 0.40 MM PITCH, ROHS COMPLIANT, WLCSP-4
1.65 V FIXED POSITIVE LDO REGULATOR, 0.135 V DROPOUT, PBGA4 0.40 MM PITCH, ROHS COMPLIANT, WLCSP-4
|
ANALOG DEVICES INC
Analog Devices, Inc.
|
