PART |
Description |
Maker |
HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)
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http:// SIEMENS AG
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EAW082-XLG EAW162-X3LG EAW162-X3LW EAW162-X9LG EAW |
OLED-DISPLAYS INCL. CONTROLLER 8-BIT AND 4-BIT
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List of Unclassifed Manufacturers List of Unclassifed Man...
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IDT728985 IDT728985DB IDT728985J IDT728985J8 IDT72 |
TSI-TDM Switches 256 x 256 Time Slot Interchange Digital Switch, 5.0V 256 x 256 TSI, 8 I/O at 2Mbps, Variable/Constant Delay, 5.0V
|
Integrated Device Technology IDT
|
EM4324 |
1 kbit Read/Write, ISO 18000-6C / EPC C-1 G-2 Passive / Battery-assisted Passive Contactless IC
|
EM Microelectronic - MARIN SA
|
HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HY |
256k x 16 Bit FPM DRAM 3.3 V 60 ns -3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh 256k x 16 Bit FPM DRAM 3.3 V 70 ns From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
|
AM41DL1634DB30IT AM41DL1634DB45IS AM41DL1634DB70IS |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
S469-0060-02 S469-0040-02 S469-0080-02 S474-0200-0 |
10 TAP 14 PIN DIP PASSIVE DELAY MODULES PASSIVE DELAY LINE, TRUE OUTPUT, PDSO14 PASSIVE DELAY LINE, TRUE OUTPUT, PDIP14
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Bel Fuse, Inc. BEL FUSE INC
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HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY |
256k x 16 Bit EDO DRAM 3.3 V 60 ns -3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
AM29F400BT-90FC AM29F400BT-90EIB AM29F400BT-90SE |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位).0伏的CMOS只引导扇区闪 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO44
|
Advanced Micro Devices, Inc.
|
M410000027 M410000022 M41000001Z M41000001W |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位).0伏的CMOS只,同时作业闪存兆位12亩x 8-Bit/256亩x 16位),静态存储器
|
Advanced Micro Devices, Inc.
|
DL161 DL163 DL164 AM42DL1644DB30IT |
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
|
Advanced Micro Devices
|