PART |
Description |
Maker |
SPP20N65C3 SPI20N65C3 SPP20N65C307 SPA20N65C3 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220
|
Infineon Technologies AG
|
SPB04N60S5 SPB04N60S507 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPI11N60S5 SPP11N60S5 SPP11N60S509 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP20N60CFD09 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP04N60S5 SPP04N60S509 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
IPW60R099CP IPW60R099CP08 |
Cool MOS Power Transistor Feature new revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP20N65C3 SPP20N65C309 SPI20N65C3 SPA20N65C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
SPP04N60S5 SPP04N60S507 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
SPW11N80C3 SPW11N80C308 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
SPI16N50C3 SPP16N50C307 SPA16N50C3 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
SPB21N50C3 SPB21N50C305 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
SPI07N65C3 SPA07N65C3 SPP07N65C309 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|