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SIDC06D60F610 - Fast switching diode 600V Emitter Controlled technology 70 μm chip

SIDC06D60F610_4669609.PDF Datasheet


 Full text search : Fast switching diode 600V Emitter Controlled technology 70 μm chip
 Product Description search : Fast switching diode 600V Emitter Controlled technology 70 μm chip


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From old datasheet system
INFINEON[Infineon Technologies AG]
SIDC03D60F610 Fast switching diode 600V Emitter Controlled technology 70 μm chip
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RGP30J-B RGPB30J Fast Recovery Pack: G3
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:600V CURRENT: 3.0A
Gulf Semiconductor
BYV95CGP BYV95AGP BYV95BGP Fast Recovery Pack: DO-15
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:200 TO 600V CURRENT: 1.5A
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RU20JGF Ultra Fast Recovery Pack: DO-15
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE: 600V CURRENT: 2.0A
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IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M 600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
IRF[International Rectifier]
IRG4BC20FD IRG4BC20FDPBF 600V Fast 1-8 kHz Copack IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
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