| PART |
Description |
Maker |
| NMA2516-2T |
High Power Broadband Noise Sources 7800 MHz to 8500 MHz
|
Micronetics, Inc.
|
| NMA5107-A1M |
High Power Broadband Noise Sources 100 Hz to 100 MHz
|
Micronetics, Inc.
|
| MAX3524 |
"Low-Noise, High-Linearity Broadband Amplifier"
|
Maxim
|
| BFS482 Q62702-F1573 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFP182W |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| BFG193 Q62702-F1291 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
|
SIEMENS[Siemens Semiconductor Group]
http://
|
| BFR193 Q62702-F1218 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
| BFR949T |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC-75
|
Infineon Technologies AG
|
| BFR193W |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
INFINEON[Infineon Technologies AG]
http://
|
| ERA-5SM ERA-3SM ERA-50SM ERA-4 ERA-4SM ERA-4XSM ER |
MONOLITHIC AMPLIFIERS 50?BROADBAND DC to 8 GHz
MONOLITHIC AMPLIFIERS 50?/a> BROADBAND DC to 8 GHz
MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz
Surface Mount Monolithic Amplifier 50/ Broadband/ DC to 4 GHz
Monolithic Amplifier 50OHM/ Broadband/ DC to 4 GHz
AC-DC Converter, 60Watt,Input VAC: 90~260, Output VDC: 12, Max Output Current(A): 5, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%, Indefinite (automatic recovery)
AC-DC Converter, 60Watt,Input VAC: 90~260, Output VDC: 5, Max Output Current(A): 10, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%, Indefinite (automatic recovery)
AC-DC Converter, 60Watt,Input VAC: 90~260, Output VDC: 24, Max Output Current(A): 2.5, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%, Indefinite (automatic recovery)
AC-DC Converter, 60Watt,Input VAC: 90~260, Output VDC: 15, Max Output Current(A): 4, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%, Indefinite (automatic recovery)
AC-DC Converter, 75 Watt Input VAC: 90~260, Output VDC: 12, Max Output Current(A): 6.25, Package: Enclosed, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%,Single Outputs
MONOLITHIC AMPLIFIERS 50з BROADBAND DC to 8 GHz 0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
MONOLITHIC AMPLIFIERS 50з BROADBAND DC to 8 GHz 0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MINI[Mini-Circuits]
|
| Q62702-F1189 BFQ82 |
NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
|
SIEMENS[Siemens Semiconductor Group]
|
|
