| PART |
Description |
Maker |
| NTGS4141NT1G |
Power MOSFET 30 V, 7.0 A, Single N-Channel, TSOP-6; Package: TSOP-6; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ON Semiconductor
|
| CY14B104K CY14B104K-ZS20XC CY14B104K-ZS20XCT CY14B |
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: 0° to 70°C; Package: 44-TSOP-II; Features: Real-Time Clock
4 Mbit (512K x 8/256K x 16) nvSRAM with Real Time Clock; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 25 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM with Real Time Clock; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
|
CYPRESS SEMICONDUCTOR CORP
Cypress Semiconductor, Corp.
|
| KMA2D8P20X |
TSOP-6 PACKAGE
|
KEC(Korea Electronics)
|
| CAT28C512 CAT28C513 |
Parallel EEPROM, 512Kb (TSOP Package)
|
Catalyst Semiconductor
|
| V54C3128804VS V54C3128404VS V54C3128804VT |
128Mbit SDRAM 3.3 VOLT/ TSOP II / SOC PACKAGE 8M X 16/ 16M X 8/ 32M X 4
128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4 128Mbit SDRAM.3伏，第二的TSOP / SOC的包米1616米x 82 × 4
|
Mosel Vitelic Corp
Mosel Vitelic, Corp.
|
| K4H280438F-ULA2 K4H280838F-UCB3 K4H280838F-ULB3 K4 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅DDR SDRAM的规6 TSOP-II免费（符合RoHS
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| V55C2128164V |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic, Corp.
|
| IRF5804TR |
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
| SI3443DV SI3443DVTR |
Ultra Low On-Resistance
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
IRF[International Rectifier]
|
| CY14E104M-ZS20XI CY14E104K-ZS25XCT CY14E104M-ZS25X |
Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 25ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 25 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II ; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO44
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 45ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 45 ns, PDSO44
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO44
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO44
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO54
4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock
|
Cypress Semiconductor, Corp.
|
| K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S2 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费（符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
