| PART |
Description |
Maker |
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| SGL0363ZPCK2 SGL0363ZPCK4 SGL0363ZSR SGL0363ZPCK1 |
5MHz to 2000MHz LOW NOISE AMPLIFIER SILICON GERMANIUM
|
RF Micro Devices
|
| BGA622 |
Silicon Germanium Wide Band Low Noise Amplifier
|
INFINEON[Infineon Technologies AG]
|
| SGL-0622Z |
100 - 4000 MHz Low Noise Amplifier Silicon Germanium
|
SIRENZA MICRODEVICES
|
| RQG1003UQ-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation.
|
| RQG1001UPAQF RQG1001UP-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
RENESAS[Renesas Electronics Corporation]
|
| BGA619 |
The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications
|
Infineon Technologies AG
|
| RPM6937-V4 RPM6938-V4 |
Lead Frame Remote Control Receiver Modules (5V with superior anti-nois characteristics Type)
|
ROHM
|
| BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
| BFP640 BFP640-15 |
Low Noise Silicon Germanium Bipolar RF Transistor
|
Infineon Technologies A...
|
| BFP62010 |
NPN Silicon Germanium RF Transistor
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| 1N128 |
Germanium Diodes / Germanium Rectifiers
|
ETC
|
