| PART |
Description |
Maker |
| W3EG6433S335BD4 W3EG6433S202AD4 W3EG6433S202BD4 W3 |
256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb
256M-P DDR SDRAM
IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor
http://
|
| W3DG6432V75D2 WED3DG6332V7D2 WED3DG6332V10D2 WED3D |
256MB- 32Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HYM72V32636BLT8-K HYM72V32636BT8-K HYM72V32636BLT8 |
SDRAM - Unbuffered DIMM 256MB
SDRAM|32MX64|CMOS|DIMM|168PIN|PLASTIC
|
Hynix Semiconductor
|
| HYS72D128021GR-7-B HYS72D64020GR-8-B HYS72D128020G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC1600 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC1600 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC1600 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank
2.5 V 184-pin Registered DDR-I SDRAM Modules
|
INFINEON[Infineon Technologies AG]
|
| 256MBDDRSDRAM K4H561638B K4H560838B K4H560438B |
256Mb DDR SDRAM
DDRSDRAMSpecificationVersion0.3
DDR SDRAM Specification Version 0.3
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4H561638A-TCA0 K4H561638A-TCA2 K4H561638A-TCB0 K4 |
128Mb F-die DDR SDRAM Specification
256Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
128MB DDR SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W3E32M64S-200BC W3E32M64S-200BI W3E32M64S-200BM W3 |
32Mx64 DDR SDRAM
|
White Electronic Designs Corporation
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| HYMD232726CL8-H HYMD232726CL8-K HYMD232726CL8-L HY |
DDR SDRAM - Unbuffered DIMM 256MB
32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
Unbuffered DDR SDRAM DIMM
|
HYNIX SEMICONDUCTOR INC
|
