| PART |
Description |
Maker |
| TLP1025 |
PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
Toshiba
|
| TLP1254C6 |
PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
TOSHIBA
|
| TLP1033A |
TOSHIBA Photointerrupter Infrared LED + Photo IC
|
TOSHIBA[Toshiba Semiconductor]
|
| TLP813 |
TOSHIBA PHOTOINTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
TOSHIBA[Toshiba Semiconductor]
|
| TLP1000A TLP1001A |
(TLP1000A / TLP1001A) PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
Toshiba
|
| STS7103 |
Infrared LED, 3.9 mm, 1 ELEMENT, INFRARED LED, 950 nm, HERMETIC SEALED, TO-18, 2 PIN
|
Vishay Semiconductors
|
| IR17-21C-TR8 IR17-21C_TR8 IR17-21C/TR8 |
1.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
Infrared Chip LED
|
EVERLIGHT ELECTRONICS CO LTD
Everlight Electronics Co., Ltd
|
| TLP908 TLP908LB |
POSITION, LINEAR SENSOR-DIFFUSE, 0.5-1.5mm, 0.50-0.75mA, RECTANGULAR, THROUGH HOLE MOUNT
PHOTOREFLECTIVE SENSORS INFRARED LED PHOTO TRANSISTOR PHOTOREFLECTIVE传感器红外发光二极管光敏三极
PHOTOREFLECTIVE SENSORS INFRARED LED PHOTOTRANSISTOR
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| OP290 OP290A OP290B OP290C OP291A OP291B OP291C OP |
4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC
OPTEK Technologies
|
| LN59-LNA2702L LNA2702L LN59 |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
|
| ASDL-4772-C41 ASDL-4772-C22 |
1.6 mm, 1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
Lite-On Technology, Corp.
AVAGO TECHNOLOGIES LIMITED
|
