| PART |
Description |
Maker |
| MAGX-000035-045000-V1 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solution...
|
| MAGX-003135-SB3PPR MAGX-003135-180L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-001214-250L00 MAGX-001214-SB1PPR MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| CGH40035F-AMP |
35 W, RF Power GaN HEMT
|
Cree, Inc
|
| CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
| TGI0910-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| CG2H40045 CG2H40045F CG2H40045P |
45 W, DC - 4 GHz RF Power GaN HEMT
|
Cree, Inc
|
| TGA2576-FL |
2.5 to 6 GHz GaN HEMT Power Amplifier
|
TriQuint Semiconductor
|
| TGF2952 TGF2952-15 |
7 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-2-02 TGF2023-2-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| MAGX-000035-030000 MAGX-000035-SB1PPR MAGX-000035- |
GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
