| PART |
Description |
Maker |
| BGA616-11 |
Silicon Germanium Broadband MMIC Amplifier
|
Infineon Technologies A...
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| 1N55 1N64 1N73 1N107 1N273 1N277 1N279 1N281 1N289 |
1N55
1N64
1N73
1N3082
1N3865
1W569 1W634
AA112 AA113 AA117 AA118 AA119
DR213
HG5007 HG50089
T7G T17G T19G
GERMANIUM DOIDES
GERMANIUM DOIDES
GERMANIUM DIODES
|
American Microsemiconductor Inc.
American Microsemicondu...
American Accurate Compo...
|
| BFS17P BFS18P. |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| BFP690E6327 |
NPN Silicon Germanium RF Transistor
|
Infineon
|
| BFR740L3 |
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| BF776 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFR750L3RH |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| UPC3227TB-E3 UPC3227TB-E3-A |
5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER
|
NEC
|
| BGT24ATR11 |
Silicon Germanium 24 GHz Transceiver MMIC
|
Infineon Technologies A...
|
| BFU760F BFU760F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFY640 BFY640B |
HiRel NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
