PART |
Description |
Maker |
BGA616-11 |
Silicon Germanium Broadband MMIC Amplifier
|
Infineon Technologies A...
|
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
BFP620F07 BFP620FH7764 BFP620F |
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR NPN Silicon Germanium RF Transistor NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG Infineon Technologies A...
|
1N128 |
Germanium Diodes / Germanium Rectifiers
|
ETC
|
NESG260234-T1 NESG260234 NESG260234-T1-AZ |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell CEL[California Eastern Labs]
|
BFP74009 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG Infineon Technologies A...
|
SGA-9289 |
Silicon Germanium HBT Amplifier
|
Stanford Microdevices
|
NESG340033 NESG340033-T1B |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
BF776 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
BGT24MTR12 |
Silicon Germanium 24 GHz Transceiver MMIC
|
Infineon Technologies
|
BFY640 BFY640B |
HiRel NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|