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SMG2306N - N-Channel Enhancement Mode Mos.FET

SMG2306N_4563229.PDF Datasheet


 Full text search : N-Channel Enhancement Mode Mos.FET


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STH7NA100FI STW7NA100FI STW7NA100 5759 OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
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N-CHANNEL MOSFET
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N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率马鞍山晶体管
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APT1001RBLC APT1001RSLC APT1001 POWER MOS VI 1000V 11A 1.000 Ohm
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Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
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N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
ADPOW[Advanced Power Technology]
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Topaz Semiconductor
ETC[ETC]
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Philips Semiconductors
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PHILIPS[Philips Semiconductors]
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APT10035JLL POWER MOS 7 1000V 25A 0.350 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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APT6010LLL APT6010B2LL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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