| PART |
Description |
Maker |
| SRP1255-1R2M SRP1255-2R2M |
MAGNETICS - High Current Power Inductors 1 ELEMENT, 1.2 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - High Current Power Inductors 1 ELEMENT, 2.2 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
BOURNS INC
|
| SRP1280-R26M SRP1280-R32M |
MAGNETICS - High Current Power Inductors 1 ELEMENT, 0.26 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - High Current Power Inductors 1 ELEMENT, 0.32 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
| CF322513-330K CF322513-R33K CF322513-220K CF322513 |
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.47 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.68 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductors 4.7uH0.1 MultiLayer High Current 1 ELEMENT, 4.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductors 1uH0.1 MultiLayer High Current 1 ELEMENT, 1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 5.6 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 6.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 3.9 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 3.3 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
BOURNS INC
|
| CW201212-R33J CW201212-12NJ CW201212-R56J CW201212 |
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.012 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.91 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductor; Inductor Type:High Frequency; Inductance:13.3nH; Inductance Tolerance: /- 5 %; Current Rating:600mA; Series:CW201212; Package/Case:0805; Core Material:Alumina Ceramic; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Bourns, Inc.
BOURNS INC
|
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| SRP1270-1R8M SRP1270-8R2M |
1 ELEMENT, 1.8 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD ROHS COMPLIANT
MAGNETICS - High Current Power Inductors 1 ELEMENT, 8.2 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
| BCP68 |
High current. Three current gain selections. 1.4 W total power dissipation.
|
TY Semiconductor Co., L...
|
| FS100UM-03 |
100 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
Bench Power Supply; Output Voltage:30V; Output Current:3A; Number of Outputs:3; Calibrated:Yes; Certificate of Calibration:Yes; Output Current 2:.5A; Output Current 3:.5A; Output Voltage 2:12V; Output Voltage 3:5V
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NTE29 NTE30 |
50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
Silicon Complementary Transistors High Power, High Current Switch
|
NTE[NTE Electronics]
|
| 2SD1411A EE08318 |
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)
From old datasheet system
HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| SDR0805-2R5M SDR0805-100M SDR0805-120M BOURNSINC-S |
MAGNETICS - NON-SHIELDED POWER INDUCTOR 1 ELEMENT, 2.5 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Power Inductors 10uH 7.8mm SMD
Inductor; Inductor Type:Power; Inductance:12uH; Inductance Tolerance: 20 %; Current Rating:3A; Series:SDR0805; Core Material:Ferrite DR; Leaded Process Compatible:No; Mounting Type:Surface Mount; Operating Temp. Min:-40 C RoHS Compliant: No
|
Bourns, Inc.
BOURNS INC
|
|
