| PART |
Description |
Maker |
| FGW35N60HD |
Discrete IGBT (High-Speed V series) 600V / 35A
|
Fuji Electric
|
| FGW40N120H |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| FGW25N120VD |
Discrete IGBT (High-Speed V series) 1200V / 25A
|
Fuji Electric
|
| SGF23N60UFD SGF23N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 23 A, 600 V, N-CHANNEL IGBT
Ultra-Fast IGBT
Discrete, High Performance IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4PC60F-P |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
IRF[International Rectifier]
|
| SGS13N60UFD SGS13N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| SGP23N60UF SGP23N60UFTU |
Discrete, High Performance IGBT
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| IXGP16N60C2D1 IXGA16N60C2 |
HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-220AB
HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
IXYS, Corp.
|
| 2SJ226 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0503-0 00; No. of Positions: 8; Connector Type: Wire
Very High-Speed Switching Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
| 2SJ220 2SJ220L 2SJ220S |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
Hitachi,Ltd.
Hitachi Semiconductor
|
