Part Number Hot Search : 
1N4000B 8TQ10 MTA206R 220405B 220405B ICS85 RBOX103 V271HA32
Product Description
Full Text Search

PTFB213004F - High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz

PTFB213004F_4490135.PDF Datasheet


 Full text search : High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz
 Product Description search : High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz


 Related Part Number
PART Description Maker
PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 ?2170 MHz
Infineon Technologies AG
PTFB213004F High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz
Infineon Technologies AG
BLF872 BLF872-2015 UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
NXP Semiconductors
Quanzhou Jinmei Electro...
PTF080101S PTF080101 LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W 860-960MHZ
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
INFINEON[Infineon Technologies AG]
MAPLST2122-060CF RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
Tyco Electronics
BLF573S BLF573 HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
NXP Semiconductors N.V.
PTF180101 PTF180101S LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
INFINEON[Infineon Technologies AG]
PTFA041501GL PTFA041501HL Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Infineon Technologies AG
BLF6G22-180RN BLF6G22LS-180RN 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
NXP Semiconductors N.V.
IFS100V12PT4 High Power RF LDMOS FETs
Infineon Technologies AG
IFS75S12N3T4B11 High Power RF LDMOS FETs
Infineon Technologies AG
PTFA181001F Thermally-Enhanced High Power RF LDMOS FET
Infineon Technologies
 
 Related keyword From Full Text Search System
PTFB213004F DATASHEET PDF PTFB213004F 应用线路 PTFB213004F Rectifier PTFB213004F Package PTFB213004F Voltage
PTFB213004F Switch PTFB213004F Serial PTFB213004F Rectifier PTFB213004F ascel PTFB213004F volts
 

 

Price & Availability of PTFB213004F

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.21035099029541