| PART |
Description |
Maker |
| LPC3141FET180 LPC3143FET180 |
ARM926EJ-S with 192 kB SRAM, USB High-speed OTG, SD/MMC, NAND flash controller
ARM926EJ-S with 192 kB SRAM, USB High-speed OTG, SD/MMC, NAND flash controller, Decryption Engine
|
NXP Semiconductors
|
| LPC3220FET296 |
ARM926EJ-S with 128 kB SRAM, USB High-speed OTG, SD-MMC, NAND flash controller
|
NXP Semiconductors N.V.
|
| CS19208CBI |
OC-192/48/12/3 DW/FEC/PM and ASYNC Mapper Device OC-192/48/12/3仓库/前向纠错/ PM和异步映射器装置
|
Applied Micro Circuits, Corp.
|
| TRM7043 |
OC-192 SR-2 Transmitter Module(OC-192 SR-2 发送器模块)
|
Hitachi,Ltd.
|
| AMD27C64 AMD27C64-120DC AMD27C64-120DCB AMD27C64-1 |
64 Kilobit (8,192 x 8-Bit) CMOS EPROM 64千比特（8,192 × 8位）CMOS存储
64 Kilobit (8,192 x 8-Bit) CMOS EPROM 64千比特（8,192 × 8位）的CMOS存储
|
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| GM76C88AL-15 GM76C88AL-12 GM76C88AL GM76C88ALK-15 |
x8 SRAM
65,536 Bit static random access memory organized as 8,192 words by 8 bits using CMOS
65536 Bit RAM
|
etc
LG Semicon Co.,Ltd.
|
| CY7C1483V33-100BGC CY7C1483V33-117BGC CY7C1483V33- |
IC, SDRAM, 64M BIT, 512KX4X32 BIT,3.3V,10NS,100MHZ,TSOP-86
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 7.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PBGA165
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 6.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 2M X 36 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 5.5 ns, PBGA209
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IDT72V201L20J IDT72V201L20JI IDT72V211L20J IDT72V2 |
512 x 9 SyncFIFO, 3.3V
3.3 VOLT CMOS SyncFIFO 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
3.3 VOLT CMOS SyncFIFO⑩ 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
GT 11C 11#16 SKT RECP BOX RM
3.3 VOLT CMOS SyncFIFO 256 x 9/ 512 x 9/ 1/024 x 9/ 2/048 x 9/ 4/096 x 9 and 8/192 x 9
3.3 VOLT CMOS SyncFIFO256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 3.3伏的CMOS SyncFIFO56 × 912 × 9,024 × 9,048 × 9,096 × 9,192 × 9
GT 6C 3#4 3#16 SKT RECP WALL 1K X 9 OTHER FIFO, 6.5 ns, PQCC32
GT 7C 7#16S PIN RECP
3.3 VOLT CMOS SyncFIFO??256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
GT 8C 8#16 SKT RECP WALL
GT 3C 3#16S PIN RECP WALL
GT 4C 4#12 PIN PLUG
3.3 VOLT CMOS SyncFIFO?256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Techn...
|
| MT90871 MT90871AV ZARLINKSEMICONDUCTORINC-MT90871A |
8,192 x 8,192 Channels Flexible 8 k Digital Switch (F8kDX) with up to 32 Input and 32 Output Streams and Data Rates from 2 to 16 Mbps
Flexible 8K Digital Switch (F8KDX)
|
Zarlink Semiconductor Inc.
|
| HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI |
Low Power Slow SRAM - 256Kb
SWITCH, REED SPST-NO 10W SMD
QSW-REED,10MM,10W,SMD
9 POS FR-4 SIP SOCKET
x8|3V|70/85/100|Low Power Slow SRAM - 256K
x8|3.3V|70/85/100|Low Power Slow SRAM - 256K
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
x8 SRAM x8的SRAM
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Analog Devices, Inc.
Panasonic Industrial Solutions
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
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