| PART |
Description |
Maker |
| LPC3154FET208 LPC3152FET208 |
ARM926EJ-S with 192 kB SRAM, USB High-speed (OTG, Host, Device), SD/MMC, NAND flash controller, AES
|
NXP Semiconductors
|
| LPC3200 LPC3220FET296 LPC3240FET296 |
16/32-bit ARM microcontrollers
ARM926EJ-S with 128 kB SRAM, USB High-speed OTG, SD/MMC, NAND flash controller
ARM926EJ-S with 256 kB SRAM, USB High-speed OTG, SD/MMC, NAND flash controller, Ethernet
|
NXP Semiconductors N.V.
|
| UPD4168C-20 UPD4168C-15 |
8,192 x 8-BIT NMOS XRAM 8,192 x 8位NMOS管XRAM
|
NEC Corp.
NEC, Corp.
|
| LPC3141 |
(LPC3141 / LPC3143) low-power ARM926EJ microcontrollers
|
NXP
|
| TRM7043 |
OC-192 SR-2 Transmitter Module(OC-192 SR-2 发送器模块)
|
Hitachi,Ltd.
|
| AMD27C64 AMD27C64-120DC AMD27C64-120DCB AMD27C64-1 |
64 Kilobit (8,192 x 8-Bit) CMOS EPROM 64千比特（8,192 × 8位）CMOS存储
64 Kilobit (8,192 x 8-Bit) CMOS EPROM 64千比特（8,192 × 8位）的CMOS存储
|
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CS42516 CS42516-CQZ CS42516-CQZR CS42516-DQZ CS425 |
110 dB, 192 kHz 6-Ch Codec with S/PDIF Receiver
110/114 dB, 192 kHz, 2-in, 6-out Multi-Channel CODECs with S/PDIF
|
Cirrus Logic, Inc.
|
| AS7C33256FT32_36A AS7C33256FT32_36A.V1.1 AS7C33256 |
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 8.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 36 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/AMMO
From old datasheet system
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
|
