PART |
Description |
Maker |
BG312307 |
DUAL N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
BG3123 BG3123R |
RF-MOSFET - Package: SOT363 DUAL N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
BF2030R BF2030W BF2030 |
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
BF965 |
Silicon N-Channel MOSFET Tetrode
|
Siemens
|
BF1009S |
Silicon N-Channel MOSFET Tetrode for ...
|
Infineon
|
BF100507 |
Silicon N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
BF998R |
From old datasheet system Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
|
SIEMENS[Siemens Semiconductor Group] Infineon
|
BF1005R BF1005W BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
OM6215SS OM6214SS OM6216SS OM6217SS |
30 A, 100 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 100V Dual N-Channel MOSFET in a S-6 package 400V Dual N-Channel MOSFET in a S-6 package 500V Dual N-Channel MOSFET in a S-6 package 200V Dual N-Channel MOSFET in a S-6 package
|
List of Unclassifed Manufacturers ETC International Rectifier
|
Q62702-F1587 BF1012W |
From old datasheet system SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS[Siemens Semiconductor Group]
|