| PART |
Description |
Maker |
| HN27C4000G-10 HN27C4000G HN27C4000G-15 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM 524288词？8-Bit/262144-Word x 16位的CMOS紫外线可擦除只读存储
524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| GM71C4256B |
262144 word x 4 Bit CMOS DRAM
|
LG
|
| M66288FP |
262144-word x 8-bit x 3-FIFO MEMORY
|
Renesas Electronics Corporation
|
| GM71C4256 |
262144 word x 4 Bit CMOS DRAM
|
GoldStar
|
| M5M5V416CWG-55HI02 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
http://
Renesas Electronics Corporation
|
| M5M5T5672TG-22 M5M5T5672TG-25 |
18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| M5M5V416CWG-55HI M5M5V416CWG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
Memory>Low Power SRAM
|
http://
RENESAS[Renesas Electronics Corporation]
|
| M5M5V416BRT-70HI M5M5V416BTP-70HI M5M5V416BRT |
Memory>Low Power SRAM
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| M5M44260CJ-7 |
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM 快速页面模194304位（262144字由16位）动态随机存储器
|
Mitsubishi Electric, Corp.
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| M5M4V16G50DFP-10 M5M4V16G50DFP-12 M5M4V16G50DFP-8 |
From old datasheet system
16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
