| PART |
Description |
Maker |
| MTN2N70I3 |
N-Channel Enhancement Mode Power MOSF
|
Cystech Electonics Corp.
|
| 1N6767 1N6767R JANTXV1N6767R 1N6766 1N6766R JANTX1 |
12A center-tap ultra-fast rectifier
400V, 12A, Center-Tap Ultra-Fast Power Rectifier(400V , 12A,中心抽头，超快恢复电源整流器)
600V, 12A, Center-Tap Ultra-Fast Power Rectifier(600V , 12A,中心抽头，超快恢复电源整流器)
400V Thru 600V 12A Center-Tap Ultra-Fast Power Rectifier in TO-254 Hermetic Package
400V Thru 600V, 12A, Center-Tap Ultra-Fast Power Rectifier in TO-254 Hermetic Package
From old datasheet system
|
Electronic Theatre Controls, Inc.
Omnirel
ETC[ETC]
List of Unclassifed Manufacturers
|
| AOW12N60 AOWF12N60 |
600V,12A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
| BT138-600 BT138-600F BT138-600G BT138-500/B BT138- |
TRIAC 12A SOT-186A
TRIAC 12A/600V
TRIAC 12A/500V
Triacs
|
Philips Semiconductors
|
| 12FR120 12FR120M A12FR120 A12FR120M 12FR100 12FR10 |
STANDARD RECOVERY DIODES
Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Green/Yellow; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1015, CSA Type TEW, JQA-F-, Passes VW-1 Flame Test RoHS Compliant: Yes 标准恢复二极
STANDARD RECOVERY DIODES 标准恢复二极
CAPACITOR 8200UF 25V ELEC TSHA
WIRE 18AWG WHITE UL 1015 600V
UL STYLE 1015, CSA TYPE TEW, 600V, 105C, GREEN W. YELLOW
WIRE, UL1015, 18AWG (16X30G), 600V, RED
100V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
1000V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
1200V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
400V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
600V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
800V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2SK3012 |
VX-2 Series Power MOSFET(600V 12A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| R6012ANX R6012ANX12 |
Nch 600V 12A Power MOSFET
|
Rohm
|
| U12C30 U12C40 U12C50 U12C60 |
POWER RECTIFIERS(12A/300-600V)
POWER RECTIFIERS(12A,300-600V)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| RJK60S3DPD-00J2 |
600V - 12A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MG600Q1US41 E002366 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF7460 IRF7460TR IRF7460TRPBF |
12 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
Power MOSFET(Vdss=20V/ Id=12A)
Power MOSFET(Vdss=20V, Id=12A)
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
