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CR8PM-12 - Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

CR8PM-12_4383100.PDF Datasheet


Part No.	CR8PM-12 CR8PM-8
Description	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
File Size	71.52K / 5 Page
Maker	Mitsubishi Electric Corporation
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Full text search : Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

Product Description search : Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

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Related keyword From Full Text Search System

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