PART |
Description |
Maker |
BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
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BLS6G2731S-130 |
LDMOS S-band radar power transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
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NXP Semiconductors N.V.
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BLL1214-35 BLL1214-35_1 |
L-band radar LDMOS transistor L-band radar LDMOS driver transistor From old datasheet system
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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BLL6H1214-500 |
LDMOS L-band radar power transistor
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NXP Semiconductors
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BLF6G21-10G |
Power LDMOS transistor 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
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NXP Semiconductors N.V.
|
BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
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NXP Semiconductors N.V.
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NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell Renesas Electronics Corporation
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BLL1214-35 |
L-band radar LDMOS driver transistor
|
NXP Semiconductors
|
LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
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Polyfet RF Devices
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BLF7G27LS-200PB BLF7G27L-200PB |
Power LDMOS transistor 3 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET Power LDMOS transistor BLF7G27L-200PB<SOT1110A (CDFM8)|<<http://www.nxp.com/packages/SOT1110A.html<1<Always Pb-free,;BLF7G27L-200PB<SOT1110A (CDFM8)|<<http://www.nxp.com/packages/SOT1110A.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
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