PART |
Description |
Maker |
IRF7304TR |
Generation V Technology -20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
IRLML6302TRPBF IRLML6302PBF07 |
HEXFET? Power MOSFET technology, Ultra Low On-Resistance, P-Channel MOSFET generation v technology
|
International Rectifier
|
IRF7404TRPBF |
generation v technology
|
International Rectifier
|
IRL3103D1PBF |
Generation 5 Technology
|
International Rectifier
|
IRF7403 IRF7403TRPBF |
Generation V Technology Power MOSFET
|
IRF[International Rectifier]
|
IRF7501PBF IRF7501TRPBF IRF7501PBF-15 |
Generation V Technology Ulrtra Low On-Resistance
|
International Rectifier
|
IRF7313PBF IRF7313TRPBF IRF7313PBF-15 |
HEXFET Power MOSFET Generation V Technology
|
IRF[International Rectifier]
|
IRLML2803GPBF11 |
Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET
|
International Rectifier
|
KRF7401 |
Generation V Technology Ultra Low On-Resistance N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
IRF7503 IRF7503TR |
Generation V Technology Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)
|
International Rectifier
|
SGB10N60A07 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGB06N60 SGB06N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|