| PART |
Description |
Maker |
| BUK101-50GS |
PowerMOS transistor TOPFET(功率MOS晶体管TOPFET)
|
NXP
Philips
|
| BUK107-50DS |
PowerMOS transistor Logic level TOPFET
|
NXP Semiconductors
Philips Semiconductors
|
| BUK110-50DL |
PowerMOS transistor Logic level TOPFET
|
Philips Semiconductors
|
| BUK102-50DL |
PowerMOS transistor Logic level TOPFET
|
NXP Semiconductors
Philips Semiconductors
|
| BUK210-50Y |
PowerMOS transistor TOPFET high side switch
|
NXP Semiconductors
|
| BUK101-50DL BUK101-50 |
PowerMOS transistor Logic level TOPFET PowerMOS晶体管逻辑电平TOPFET
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| BUK223-50Y BUK223-50Y_1 |
PowerMOS transistor TOPFET high side switch
From old datasheet system
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUK107-50DS |
PowerMOS transistor Logic level TOPFET(功率MOS晶体管逻辑电平TOPEFT) 0.7 A, 50 V, 0.175 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| BUK202-50Y BUK202-50 |
PowerMOS transistor TOPFET high side switch
XTAL CER SMT 6X3.5 2PAD
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PIP3103-T PIP3103-T_1 |
BUF OR INV BASED PRPHL DRVR, PDSO4
From old datasheet system
PowerMOS transistor Logic level TOPFET
|
NXP SEMICONDUCTORS
Philips
|
| BUK110-50GS |
PowerMOS transistor TOPFET
|
NXP Semiconductors
Philips Semiconductors
|
| BUK444-200 BUK444-200A BUK444-200B BUK444 |
PowerMOS transistor 功率金属氧化物半导体晶体
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk
PowerMOS transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
