PART |
Description |
Maker |
APT6035BVR |
POWER MOS V 600V 18A 0.350 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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APT6020LVR |
POWER MOS V 600V 30A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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APT6015B2VR APT6015 |
POWER MOS V 600V 38A 0.150 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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APT6025BLL APT6025SLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 24A 0.250 Ohm
|
Advanced Power Technology
|
APT60M75JFLL |
POWER MOS 7 600V 58A 0.075 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
APT6013B2LL APT6013LLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS V 600V 43A 0.130 Ohm
|
Advanced Power Technology
|
APT6040 APT6040BN APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
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2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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NEC[NEC]
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APT6025BFLL APT6025SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 24A 0.250 Ohm
|
Advanced Power Technology, Ltd.
|
APT60M90JN |
POWER MOS IV 600V 57A 0.090 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
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ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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