| PART |
Description |
Maker |
| CM600E2Y-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM400HB-90H |
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
400 A, 4500 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| CM800E2C-66H |
2nd-Version HVIGBT Modules
|
Mitsubishi Electric
|
| MDD142 MDD142-18N1 MDD142-08N1 MDD142-12N1 MDD142- |
Thyristor and Rectifiers Modules
HIgh Power Diode Modules 165 A, 800 V, SILICON, RECTIFIER DIODE
HIgh Power Diode Modules 165 A, 1800 V, SILICON, RECTIFIER DIODE
HIgh Power Diode Modules 165 A, 1400 V, SILICON, RECTIFIER DIODE
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| PM20CSJ060 PM400DAS060 PM100DSA120 PM300CVA060 PM3 |
IPMS Modules: 600V
MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
IPMS Modules:1200V
50Amp - intelligent power modules
|
Mitsubishi Electric Corporation
|
| TM55DZ-24 TM55DZ-2H TM55CZ-24 TM55CZ-2H |
THYRISTOR MODULES HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| MDD220-18N1 MDD220 MDD220-08N1 MDD220-12N1 MDD220- |
High Power Diode Modules
Thyristor and Rectifiers Modules
|
IXYS[IXYS Corporation]
|
| RM50C1A-XXS RM50DA-C1A-XXS RM50DA/CA/C1A-XXS RM50C |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM20C1A-XXS RM20DA/CA/C1A-XXS RM20CA-XXS RM20DA-XX |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| ALPHA-TRX433S ALPHA-TRX915S |
The Alpha Modules are extremely cost effective but high performance radio modules.
|
rfsolutions.ltd
|
| MDD26 |
HIgh Power Diode Modules
|
IXYS Corporation
|
