PART |
Description |
Maker |
BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
3SK249 E001708 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS) N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) From old datasheet system
|
Toshiba Semiconductor Sanyo Semicon Device
|
BF1206F |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
BF1102 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
3SK297 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
3SK51 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
BF1201WR BF1201R BF1201 BF1201-15 BF1201-2015 |
N-channel dual-gate PoLo MOS-FETs
|
Quanzhou Jinmei Electro... PHILIPS[Philips Semiconductors] NXP Semiconductors
|
3SK298 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
BF982 |
SILICON N-CHANNEL DUAL GATE MOS-FET
|
ETC
|
3SK186 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|