PART |
Description |
Maker |
SSTS20120 |
High Junction Temperature
|
Silikron Semiconductor ...
|
SSTS20L100CTF |
High Junction Temperature
|
Silikron Semiconductor Co.,...
|
SSTS20100 |
High Junction Temperature
|
Silikron Semiconductor ...
|
SSMD60200CT SSMD60200CTF |
High Junction Temperature
|
Silikron Semiconductor ...
|
SSTS3040CT |
High Junction Temperature
|
Silikron Semiconductor Co.,LTD. Silikron Semiconductor ...
|
SSMD3060CTF |
High Junction Temperature
|
Silikron Semiconductor ...
|
NESG2101M16 NESG2101M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
|
NEC, Corp. NEC[NEC]
|
NESG2031M05-T1 NESG2031M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范 From old datasheet system
|
NEC, Corp. NEC Corp. NEC[NEC]
|
LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|