| PART |
Description |
Maker |
| SSTS20120 |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSMD60200CT SSMD60200CTF |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD5L150A |
High Junction Temperature
|
Silikron Semiconductor Co.,...
|
| SSTS30120CT SSTS30120CTF |
High Junction Temperature
|
Silikron Semiconductor Co.,LTD.
Silikron Semiconductor ...
|
| SSBD5L300A |
High Junction Temperature
|
Silikron Semiconductor Co.,...
|
| SMA6F12AVCL SMA6F13A SMA6F13A-TR SMA6F5.0A |
High junction temperature Transil?
|
STMicroelectronics
|
| NESG2101M05-T1 NESG2101M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp.
NEC[NEC]
|
| NESG3031M14NBSP NESG3031M14-T3 NESG3031M14 |
From old datasheet system
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC[NEC]
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
