PART |
Description |
Maker |
K7I643684M-EI25 K7I643684M-EI30 K7I641884M-CI30 K7 |
72Mb DDRII SRAM Specification 72Mb SRAM的规范条DDRII
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
GS8640V18T-200 GS8640V18T-167I GS8640V18T-300 GS86 |
72Mb Burst SRAMs 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS864118 GS864132 GS864136 |
72Mb Burst SRAMs
|
GSI Technology
|
GS8641Z18 GS8641Z32 GS8641Z36 |
72Mb NBT SRAMs
|
GSI Technology
|
GS864036T-200 GS864036T-300I |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
http://
|
GS8640E18T-200IV GS8640E18T-250V GS8640E18T-200V G |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
K7J643682M-FECI30 K7J641882M K7J641882M-FC16 K7J64 |
72Mb M-die DDRII SRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
GS8662T08E-300I GS8662T08E-167 GS8662T08GE-167 GS8 |
72Mb SigmaCIO DDR-II Burst of 2 SRAM
|
GSI[GSI Technology]
|
GS8641V36 GS8641V18 GS8641V32 GS8641V32E-200IT |
2M X 32 CACHE SRAM, 7.5 ns, PBGA165 72Mb Burst SRAMs
|
GSI Technology
|
K7J641882M |
(K7J641882M / K7J643682M) 72Mb M-die DDRII SRAM Specification
|
Samsung semiconductor
|
IS61DDPB42M36A/A1/A2 IS61DDPB44M18A IS61DDPB44M18A |
4Mx18, 2Mx36 72Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|