| PART |
Description |
Maker |
| GS8640Z18T-V GS8640Z18T-250V GS8640Z18T-250IV |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 72Mb流水线和流量，通过同步唑的SRAM
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS8644V18B-166I GS8644V36E-225 GS8644V18E-150I |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 6.5 ns, PBGA165
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8640Z18 GS8640Z36 |
72Mb NBT SRAMs
|
GSI Technology
|
| GS864036T-200 GS864036T-300I |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
http://
|
| GS8662S36E-250 GS8662S36E-250I GS8662S08E-167I GS8 |
72Mb Burst of 2 DDR SigmaSIO-II SRAM
|
GSI[GSI Technology]
|
| GS8644V18B-166 GS8644V18B-250 GS8644V18B-250I GS86 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8644V36E-250 GS8644V18E-133I |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI Technology
|
| GS864418E-200 GS864418E-200I GS864418E-133 GS86441 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8642ZV36GB-250I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI Technology
|
| K7J641882M |
(K7J641882M / K7J643682M) 72Mb M-die DDRII SRAM Specification
|
Samsung semiconductor
|
