| PART |
Description |
Maker |
| MAAM-007219-000000 |
3.6 V, 450 mW DECT RF Power Amplifier IC 1880 - 1900 MHz 3.6 V的，450毫瓦的DECT射频功率放大器IC 1880900年兆
|
NXP Semiconductors N.V.
|
| MA02206GJ |
3.6V 0.5W RF Power Amplifier IC for DECT
|
MACOM[Tyco Electronics]
|
| SCVP0345N1 SCVP0345N2 SJVP0345N2 SXVP0345N2 SXVVP0 |
1.5 A, 450 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3
400 mA, 450 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
|
Supertex, Inc.
|
| UAA3545 UAA3545HL UAA3545HL/C1 |
UAA3545; Fully integrated DECT transceiver
Fully integrated DECT transceiver TELECOM, CORDLESS, RF AND BASEBAND CIRCUIT, PQFP32
|
Philips
NXP Semiconductors N.V.
|
| MAAPSS0076 MAAPSS0076SMB MAAPSS0076TR-3000 |
DECT Power Amplifier 1880 - 1930 MHz
|
Tyco Electronics
|
| BFP136 BFP136W |
RF-Bipolar - For power amplifier in DECT and PCN systems
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| M68732H 68732H M68732 |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 450-470MHz, 7W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 450-470MHz / 7W / FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| PCD5091 PCD5091H PCD5091HZ PCD5091HZC944 PCD5091HZ |
Low cost; low power DECT baseband controllers (ABC-PRO)
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| KSC5405FTU |
5 A, 450 V, NPN, Si, POWER TRANSISTOR
|
FAIRCHILD SEMICONDUCTOR CORP
|
