| PART |
Description |
Maker |
| M48Z2M1Y10 M48Z2M1V-85PL1 M48Z2M1Y-85PL1 M48Z2M1Y- |
5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER庐 SRAM
5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER? SRAM
2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36
|
STMicroelectronics
|
| CY7C1471V25-100AXC CY7C1473V25-100AXI CY7C1473V25- |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PQFP100
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
|
| CAT64LC40ZJ CAT64LC40ZS CAT64LC40J-TE7 CAT64LC40J- |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
72-Mbit QDR™-II SRAM 4-Word Burst Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL™ Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
72-Mbit QDR-II™ SRAM 2-Word Burst Architecture SPI串行EEPROM
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
|
Analog Devices, Inc.
|
| CY7C1472BV25-167BZXC CY7C1472BV25-167BZXI CY7C1472 |
2M X 36 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL垄芒 Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL?/a> Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1363B-133AJC CY7C1363B-133AJI CY7C1363B-133AI |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 6.5 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 7.5 ns, PBGA119
CONNECTOR ACCESSORY
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| SST34HF1682C-70-4E-B1PE SST34HF1642C-70-4E-B1PE SS |
16-Bit Delta-Sigma ADC with internal reference, PGA and oscillator. I2C Serial Interface 6-SOT-23
CONNECTOR
15V 0.2A, Wide-Input Integrated Switching Regulator 3-SIP MODULE
XTAL MTL SMT HC49/USM
XTAL CER SMT 7X5 2PAD
Self-Calibrating, 16-Bit Analog-to-Digital Converter 6-SOT-23 -40 to 85
16-Bit Delta-Sigma ADC with internal reference, PGA and oscillator. I2C Serial Interface 6-SOT-23
16 Mbit Concurrent SuperFlash 2/4/8 Mbit SRAM ComboMemory 16兆兆位并行的SuperFlash 2/4/8 SRAMComboMemory
16 Mbit Concurrent SuperFlash 2/4/8 Mbit SRAM ComboMemory 16兆兆位并行的SuperFlash 2/4/8 SRAM的ComboMemory
16 Mbit Concurrent SuperFlash 2/4/8 Mbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA56
XTAL MTL T/H HC49/U 16兆兆位并行的SuperFlash 2/4/8 SRAM的ComboMemory
Replaced by OPA128 : 16兆兆位并行的SuperFlash 2/4/8 SRAM的ComboMemory
CANMS27656T25B19S 16兆兆位并行的SuperFlash 2/4/8 SRAMComboMemory
16 Mbit Concurrent SuperFlash 2/4/8 Mbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA62
|
Silicon Storage Technology, Inc.
NIC Components, Corp.
SILICON STORAGE TECHNOLOGY INC
|
| SST34HF162C-70-4E-LBK |
16 Mbit Dual-Bank Flash 2/4 Mbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA48
|
Silicon Storage Technology, Inc.
|
