| PART |
Description |
Maker |
| UTT30P04G-TN3-R UTT30P04L-TN3-R |
40A, 21V P-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| STB3020L 6474 |
CSED, FLANGE KIT 400A -通道30V 0.019ohm - 40A采用D2PAK STripFET]功率MOSFET
From old datasheet system
N - CHANNEL 30V - 0.019 - 40A - D 2 PAK STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.019ohm - 40A - D2PAK STripFET] POWER MOSFET
N - CHANNEL 30V - 0.019W - 40A - D 2 PAK STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| STP3015L STB3015 STB3015L 6057 |
From old datasheet system
N - CHANNEL 30V - 0.013 - 40A - D 2 PAK/TO-220 STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET -通道30V 0.013欧姆- 40A D2PAK/TO-220 STripFETO的功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| RFP40N10LE RF1S40N10LESM RFG40N10LE FN4061 |
40A/ 100V/ 0.040 Ohm/ Logic Level N-Channel Power MOSFETs
40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs
40A 100V 0.040 Ohm Logic Level N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRG4BC30KPBF |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 2.21V，@和VGE \u003d 15V的，集成电路\u003d 16A条）
|
International Rectifier, Corp.
|
| IRF5210 |
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V Rds(on)=0.06ohm Id=-40A)
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A)
|
IRF[International Rectifier]
|
| STP40NF10L |
N-CHANNEL 100V 0.028 OHM 40A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 100V - 0.028ohm - 40A TO-220 LOW GATE CHARGE STripFET POWER MOSFET
|
ST Microelectronics
STMicroelectronics
|
| 4N65Z |
40A 650V N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES
|
| 4N60Z |
40A 600V N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES
|
| UTT40N03 UTT40N03G-TM3-T UTT40N03G-TN3-R UTT40N03L |
40A, 30V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| RJK0454DPB-00-J5 RJK0454DPB13 |
40V, 40A, 4.9m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
