| PART |
Description |
Maker |
| RJK6032DPD-00J2 RJK6032DPD-15 |
600V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6011DJA-15 |
600V - 0.1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6002DPH-E0 RJK6002DPH-E0T2 RJK6002DPH-E0-15 |
600V - 2A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S3DPP-E0 RJK60S3DPP-E0-T2 |
600V - 12A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6018DPM-00T1 |
600V - 30A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S7DPK-M0 RJK60S7DPK-M0-T0 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6013DPP-E0 RJK6013DPP-E0-15 |
600V - 11A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6012DPP-E0 |
600V - 10A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL60S5DPK-M0 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system
P-channel MOS FET (-60V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| 2SK2110 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
MOS Field Effect Transistor
|
NEC[NEC]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
