PART |
Description |
Maker |
GS8342S36GE-250I GS8342S09E-200I GS8342S09GE-200I |
36Mb Burst of 2 DDR SigmaSIO-II SRAM 1M X 36 STANDARD SRAM, 0.45 ns, PBGA165 36Mb Burst of 2 DDR SigmaSIO-II SRAM 4M X 9 STANDARD SRAM, 0.45 ns, PBGA165 36Mb Burst of 2 DDR SigmaSIO-II SRAM 4M X 9 STANDARD SRAM, 0.5 ns, PBGA165 36Mb Burst of 2 DDR SigmaSIO-II SRAM 4M X 8 STANDARD SRAM, 0.45 ns, PBGA165 36Mb Burst of 2 DDR SigmaSIO-II SRAM 4M X 8 STANDARD SRAM, 0.5 ns, PBGA165 36Mb Burst of 2 DDR SigmaSIO-II SRAM 2M X 18 STANDARD SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
GS8182S18D-250I GS8182S18GD-267 GS8182S18D-267 GS8 |
18Mb Burst of 2 DDR SigmaSIO-II SRAM
|
GSI[GSI Technology]
|
GS8662S36E-250 GS8662S36E-250I GS8662S08E-167I GS8 |
72Mb Burst of 2 DDR SigmaSIO-II SRAM
|
GSI[GSI Technology]
|
MT54W4MH9B MT54W4MH8B MT54W1MH36B-5 MT54W1MH36B-7. |
36Mb QDRII SRAM 2-WORD BURST 36Mb QDR⑩II SRAM 2-WORD BURST ⑩分6MB四年防务审查II SRAM字爆 36Mb QDR?┥I SRAM 2-WORD BURST
|
Micron Technology, Inc.
|
MT54W4MH8B MT54W4MH8B-5 MT54W4MH8BF-4 MT54W2MH18B- |
36Mb QDR?┥I SRAM 2-WORD BURST 36Mb QDR⑩II SRAM 2-WORD BURST
|
MICRON[Micron Technology]
|
CY7C1550KV18-450BZC CY7C1550KV18-400BZC CY7C1548KV |
Sync SRAM; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165 72-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
GS8322V72 GS8322V18 |
36Mb Burst SRAMs
|
GSI Technology
|
GS8342Q36E-300 GS8342Q08E-200 GS8342Q08GE-200I GS8 |
36Mb SigmaQuad-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
GS832118GE-166 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI Technology
|
GS8322V18B-250 GS8322V18B-250I GS8322V18B-225 GS83 |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS8322V72C-200I |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
|
GSI Technology
|