| PART |
Description |
Maker |
| IPB60R120C7 |
CoolMOS?C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
|
Infineon Technologies A...
|
| IXFR26N60Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs ISOPLUS247 Q-CLASS
|
IXYS Corporation
|
| IXFH75N10Q IXFT75N10Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPER FET POWER MOSFETS Q CLASS
|
IXYS[IXYS Corporation]
ETC
|
| IXFH12N100Q IXFT12N100Q IXFH10N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Q Class
|
IXYS Corporation
|
| IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 |
HiPerFET Power MOSFETs 14 A, 1000 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXFR180N085 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)
|
IXYS Corporation
|
| IXFT80N085 IXFH80N085 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs
|
IXYS[IXYS Corporation]
|
| IXFK24N10007 IXFX24N100 IXFK24N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs
|
IXYS Corporation
|
| IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V
N-Channel Power MOSFETs/ 20 A/ 60-100 V
CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲，60-100 V
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| IXFN44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS[IXYS Corporation]
|
| IPI90R340C3 |
CoolMOS?/a> Power Transistor
|
Infineon Technologies AG
|
