| PART |
Description |
Maker |
| UPD4564323G5-A10-9JH UPD4564323G5-A60-9JH UPD45643 |
64M-bit Synchronous DRAM 4-bank/ LVTTL
64M-bit Synchronous DRAM 4-bank, LVTTL 6400位同步DRAM 4银行，LVTTL
|
NEC Corp.
NEC, Corp.
|
| M2V64S2DTP-6 M2V64S2DTP-7 M2V64S2DTP-8 M2V64S4DTP- |
64M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HYM72V64756AT8-8 HYM72V64756AT8-S |
64M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
HYNIX SEMICONDUCTOR INC
|
| IS42S16320B-7BL IS42S16320B-7BLI IS42S16320B IS42S |
64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
|
http://
Integrated Silicon Solution, Inc
|
| MT18LSDT6472AY-133B1XX |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
|
Unisonic Technologies Co., Ltd.
|
| EDE1108ACSE EDE1108ACSE-5C-E EDE1108ACSE-6E-E EDE1 |
64M X 16 SYNCHRONOUS DRAM, 0.4 ns, PBGA84
1G bits DDR2 SDRAM
|
ELPIDA MEMORY INC
|
| THMY7264E0LE-80 THMY7264E0LE-75 |
64M Word x 72 Bit Synchronous DRAM Module(64M字x 72位同步DRAM模块)
|
Toshiba Corporation
|
| M5M4V64S30ATP-12 M5M4V64S30ATP-8 M64S30A1 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| M5M4V64S40ATP-8A M5M4V64S40ATP-10 A98009_A M5M4V64 |
From old datasheet system
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2V64S50ETP-I |
64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range)
|
Elpida Memory
|
