| PART |
Description |
Maker |
| HY5PS56821LF-C4 HY5PS56821LF-C5 HY5PS56821LF-E3 HY |
256Mb DDR2 SDRAM
64M X 4 DDR DRAM, PBGA60
16M X 16 DDR DRAM, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AS4DDR16M72-8_ET AS4DDR16M72-8_IT AS4DDR16M72-8_XT |
16M X 72 DDR DRAM, 0.8 ns, PBGA219
16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
| HY5DU561622ELTP-L |
16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| IS43R16160A-75T |
16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
INTEGRATED SILICON SOLUTION INC
|
| NT5DS16M16BW-6K |
16M X 16 DDR DRAM, 0.7 ns, PBGA60
|
NANYA TECHNOLOGY CORP
|
| EDE2516AASE-AE-E EDE2516AASE-DF-E |
16M X 16 DDR DRAM, 0.5 ns, PBGA84
16M X 16 DDR DRAM, 0.45 ns, PBGA84
|
ELPIDA MEMORY INC
|
| MT8VDDT1664AG-403A1 |
16M X 64 DDR DRAM MODULE, 0.6 ns, DMA184
|
|
| THLD12N11B70 THLD12N11B75 |
16M X 64 DDR DRAM MODULE, 7 ns, DMA200
16M X 64 DDR DRAM MODULE, 7.5 ns, DMA200
|
|
| EM6AA160TS EM6AA160TS-4G EM6AA160TS-5G |
16M x 16 bit DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| W9751G8JB W9751G8JB-3 |
16M ?4 BANKS ?8 BIT DDR2 SDRAM
DDR DRAM, PBGA84
|
Winbond
WINBOND ELECTRONICS CORP
|
