| PART |
Description |
Maker |
| GS8342T18GE-267 GS8342T18GE-267I GS8342T09E-250I G |
36Mb SigmaCIO DDR-II Burst of 2 SRAM 2M X 18 STANDARD SRAM, 0.45 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 2 SRAM 4M X 9 STANDARD SRAM, 0.45 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 2 SRAM 4M X 9 STANDARD SRAM, 0.5 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 2 SRAM 4M X 8 STANDARD SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8662R08E-333 GS8662R08E-333I GS8662R08E-300 GS86 |
72Mb SigmaCIO DDR-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| GS8662R09E-167I GS8662R09GE-167I GS8662R18GE-333I |
72Mb SigmaCIO DDR-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.5 ns, PBGA165
72Mb SigmaCIO DDR-II Burst of 4 SRAM 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaCIO DDR-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaCIO DDR-II Burst of 4 SRAM 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaCIO DDR-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaCIO DDR-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| CY7C1568KV18-550BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| GS8320E36T-250 GS8320E36T-150 GS8320E36T-150I GS83 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI Technology
http://
|
| GS832118E-150I GS832118E-200 GS832118E GS832118E-1 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8320EV18GT-225 GS8320EV18GT-133 GS8320EV18GT-133 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| CY7C1418AV18-267BZC |
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
CYPRESS SEMICONDUCTOR CORP
|
| GS8342D09E-250I GS8342D09GE-200I GS8342D09E-167I G |
36Mb SigmaQuad-II Burst of 4 SRAM
36Mb SigmaQuad-II Burst of 4 SRAM 1M X 36 STANDARD SRAM, 0.45 ns, PBGA165
36Mb SigmaQuad-II Burst of 4 SRAM 4M X 8 STANDARD SRAM, 0.45 ns, PBGA165
36Mb SigmaQuad-II Burst of 4 SRAM 4M X 9 STANDARD SRAM, 0.5 ns, PBGA165
36Mb SigmaQuad-II Burst of 4 SRAM 4M X 9 STANDARD SRAM, 0.45 ns, PBGA165
|
Sanyo Denki Co., Ltd.
GSI Technology, Inc.
|
| CY7C1568KV18-500BZXC CY7C1568KV18-500BZC CY7C1570K |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
