| PART |
Description |
Maker |
| IS6MC256K-60 |
x64 Interleaved Burst Mode SRAM Module X64的交错突发模式的SRAM模块
|
Central Semiconductor, Corp.
|
| MT8LDT264HG-6X MT4LDT164HG-6X MT8LDT264HG-6S MT4LD |
x64 Fast Page Mode DRAM Module
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Micron Technology, Inc.
|
| R2A20112DD R2A20112SP |
Critical Conduction Mode Interleaved PFC Control IC
|
Renesas Electronics Corporation
|
| R2A20118ASP R2A20118ASPW0 |
Critical Conduction Mode Interleaved PFC Control IC
|
Renesas Electronics Corporation
|
| HYM5V64214ASLTZG-60 HYM5V64214ASLTZG-80 HYM5V64214 |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
ON Semiconductor
|
| AM29BL162CB-90R AM29BL162CB-70R AM29BL162CB-120R A |
16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory 16兆位米16位）的CMOS 3.0伏特，只有突发模式闪
16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory 1M X 16 FLASH 3V PROM, 65 ns, PDSO56
|
Spansion Inc.
Spansion, Inc.
|
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
| NU-33B54B-R-A NU-33B54B-P-A NU-33B54B-P NU-33B54B- |
155 Mbps 1310 nm Burst Mode TX / 622 Mbps 1490 nm Continuous-Mode RX 3.3V, 2X5 SFF Package, Class B B-PON ONU Transceiver
|
Optoway Technology Inc
|
| S71WS-P S71WS512PC0HF3SR3 S71WS512PC0HF3SR2 S71WS5 |
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM 1.8伏只x16同步写，突发模式CellularRAM的闪存记忆体
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM SPECIALTY MEMORY CIRCUIT, PBGA84
|
Spansion Inc.
Spansion, Inc.
|
| GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
10ns 133MHz 32K x 32 1Mb synchronous burst SRAM
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
| BS320GBD4V BS320GTD4V AM29BDS320GBD9VMI AM29BDS320 |
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 2M X 16 FLASH 1.8V PROM, 90 ns, PBGA64
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 32兆位米16位）.8伏，只有同时写，突发模式闪存
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA64
|
Spansion Inc.
Spansion, Inc.
|
| S71WS256P |
Burst Mode Flash Memory
|
SPANSION
|
