PART |
Description |
Maker |
MX29F001TTC-90 MX29F001TTC-70 MX29F001TTC-12 MX29F |
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDIP32 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDSO32 x8 Flash EEPROM x8闪存EEPROM
|
Macronix International Co., Ltd.
|
CAT24WC129 CAT24WC129KA-1.8TE13 CAT24WC129KA-TE13 |
128K-Bit I2C Serial CMOS E2PROM 1.8V-6.0V 128K-bit IIC serial CMOS EEPROM 2.5V-6.0V 128K-bit IIC serial CMOS EEPROM 3.0V-5.5V 128K-bit IIC serial CMOS EEPROM
|
CATALYST[Catalyst Semiconductor]
|
K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024 |
From old datasheet system 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) 128K的24位高速CMOS静态RAM.3V的工作) 128K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
IDT71L024L70PZI IDT71L024 IDT71L024L100PZ IDT71L02 |
low power 3v cmos sram 1 meg (128k X 8-bit) 128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
25C256 CAT25C256 25C128 CAT25C128 CAT25C256S16-1.8 |
256K SPI serial CMOS EEPROM 1.8-6.0V 128K SPI serial CMOS EEPROM 2.5-6.0V SPI Serial EEPROM SPI串行EEPROM 128K/256K-BitSPISerialCMOSE2PROM 64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM 128K SPI serial CMOS EEPROM 1.8-6.0V 256K SPI serial CMOS EEPROM 2.5-6.0V 128K/256K-Bit SPI Serial CMOS E2PROM
|
http:// STMicroelectronics N.V. Semtech, Corp. Abracon, Corp. CatalystSemiconductor CATALYST[Catalyst Semiconductor]
|
AT27BV010 AT27BV010-15TC AT27BV010-15TI AT27BV010- |
AML24 Series Rocker Switch, SPDT, 2 position, Gold Contacts, 0.110 in x 0.020 in (Solder or Quick-Connect), Non-Lighted, Rectangle, Snap-in Panel 128K X 8 OTPROM, 90 ns, PQCC32 1 Megabit 128K x 8 Unregulated Battery-Voltage OTP CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32 1M bit, 2.7-Volt to 3.6-Volt EPROM
|
Atmel, Corp. Atmel Corp. ATMEL Corporation
|
TC55V200FT-85 TC55V200FT-70 |
128K Word x 16 Bit CMOS Static RAM(128K字x 16 CMOS 静RAM)
|
Toshiba Corporation
|
IS24L256-2PLI IS24L256-2PI IS24L256 IS24L256-2GI I |
128K-bit/ 256K-bit 2-WIRE SERIAL CMOS EEPROM
|
Integrated Silicon Solution, Inc
|
UPD442002F9-DD10X-BC2-A UPD442002F9-BC70X-BC2-A UP |
2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC[NEC]
|
UPD441000L-X UPD441000LGU-B10X-9JH UPD441000LGU-B8 |
1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
|
NEC Corp. NEC[NEC]
|
NM27C010 27C010 |
1,048,576-Bit (128K x 8) High Performance CMOS EPROM 1,048,576位(128K的8)高性能CMOS存储 1 /048 /576-Bit (128K x 8) High Performance CMOS EPROM
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|