| PART |
Description |
Maker |
| FMG1G300US60HE |
300 A, 600 V, N-CHANNEL IGBT 7PM-HA, 7 PIN
600V, 300A IGBT Module (Molding Type)
|
Fairchild Semiconductor, Corp.
|
| IXGH40N30BD1 |
HiPerFASTTM IGBT 60 A, 300 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
| CM300HA-28H |
Single IGBTMOD 300 Amperes/1400 Volts 300 A, 1400 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE
IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| CM200TU-12H |
Six IGBTMOD 200 Amperes/600 Volts
240 x 128 pixel format, CFL Backlight with power harness 200 A, 600 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| SGH40N60UFD SGH40N60 SGH40N60UFDTU |
Ultra-Fast IGBT
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness
Discrete, High Performance IGBT with Diode
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| MID145-12A3 MII145-12A3 |
1200V IGBT module
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules - Short Circuit SOA Capability Square RBSOA 160 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
IXYS, Corp.
|
| ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp.
Microsemi Corporation
|
| IXGR50N60B2D1 IXGR50N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
68 A, 600 V, N-CHANNEL IGBT ISOPLUS247, 3 PIN
|
IXYS, Corp.
|
| BSP92E-6327 BSP92E6327 |
0.2 A, 240 V, 20 ohm, P-CHANNEL, Si, POWER, MOSFET SOT-223, 4 PIN
0.2 A, 240 V, 50 ohm, P-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
SIEMENS A G
|
|
