| PART |
Description |
Maker |
| IS61NSCS51236-200B IS61NSCS25672-200B IS61NSCS5123 |
512K X 36 STANDARD SRAM, 3.1 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209
256K X 72 STANDARD SRAM, 3.1 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209
RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM 512K X 36 STANDARD SRAM, 1.6 ns, PBGA209
RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM 256K X 72 STANDARD SRAM, 1.6 ns, PBGA209
RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM 256K X 72 STANDARD SRAM, 1.8 ns, PBGA209
RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209
|
Integrated Silicon Solution, Inc.
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的（256 × 36/512K × 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology, Inc.
|
| IS61LPD51218T/D IS61LPD25632T/D IS61SPD25632T/D IS |
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM 256K × 3256K × 3612K采样× 18 SYNCHRONOU?管道，双循环取消选择静态RAM
256K X 36 CACHE SRAM, 3.5 ns, PQFP100 TQFP-100
256K x 32/ 256K x 36/ 512K x 18 SYNCHRONOUS PIPELINE/ DOUBLE-CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solution Inc
|
| GS8162Z18B-133 GS8162Z18B-133I GS8162Z18B-200 GS81 |
133MHz 8.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
150MHz 7.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
133MHz 8.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| MBM29LV400B-10 MBM29LV400B-12 MBM29LV400T-10 MBM29 |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器)
|
Fujitsu Limited
|
| GS8160V36CGT-300 |
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS816118 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
List of Unclassifed Manufacturers
|
| GS8161E18BGD-250IV GS8161E18BT-250IV GS8161E18BT-2 |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS816036BT-250 GS816032BT-250 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
http://
|
| GS816118BT-200 GS816118BT-150 GS816118BT-150I GS81 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
