| PART |
Description |
Maker |
| CAT28F102PA-70 CAT28F102PA-55 CAT28F102T14RA-55T C |
64K X 16 FLASH 12V PROM, 70 ns, PDIP40 PLASTIC, DIP-40
64K X 16 FLASH 12V PROM, 55 ns, PDIP40 PLASTIC, DIP-40
64K X 16 FLASH 12V PROM, 55 ns, PDSO40 REVERSE, TSOP-40
64K X 16 FLASH 12V PROM, 55 ns, PDSO40 TSOP-40
64K X 16 FLASH 12V PROM, 55 ns, PQCC44 PLASTIC, LCC-44
64K X 16 FLASH 12V PROM, 45 ns, PDIP40
|
Ironwood Electronics
HIROSE ELECTRIC Co., Ltd.
Micross Components
|
| AM27F512-105DC AM27F512-105JC |
64K X 8 FLASH 12V PROM, 100 ns, CDIP28
64K X 8 FLASH 12V PROM, 100 ns, PQCC32
|
ADVANCED MICRO DEVICES INC
|
| AM28F512 AM28F512150PC AM28F512-120JEB AM28F512-90 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory(12V，CMOS 512K位整体擦除闪速存储器)
IC-512K FLASH MEMORY
4-bit magnitude comparators 16-PDIP 0 to 70
Quad 2-input exclusive-OR gates 14-PDIP 0 to 70
Decade Counter 14-SOIC 0 to 70
Dual J-K Flip-Flops with Clear 14-PDIP 0 to 70
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC 0 to 70
Dual J-K Flip-Flops with Clear 14-SOIC 0 to 70
Quad bistable latches 16-SOIC 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-PDIP 0 to 70
4-bit magnitude comparators 16-SOIC 0 to 70
Quad bistable latches 16-PDIP 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SO 0 to 70
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SSOP 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SOIC 0 to 70
8-Bit Identity/Magnitude Comparators 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PDSO32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PQCC32
Quad 2-input exclusive-OR gates 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PQCC32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PQCC32
Quad 2-input exclusive-OR gates 14-SO 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PDIP32
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32
ER 14C 14#16 PIN RECP LINE
64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
SPANSION LLC
|
| SST39VF010-90-4C-B3KE SST39VF040-90-4C-WHE SST39VF |
128K X 8 FLASH 2.7V PROM, 90 ns, PBGA48
512K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
512K X 8 FLASH 2.7V PROM, 90 ns, PQCC32
64K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
256K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
|
| CAT28F010NI-12T CAT28F010TI-90T CAT28F010TI-12T CA |
1 Megabit CMOS Flash Memory
128K X 8 FLASH 12V PROM, 90 ns, PDSO32
Bulk Erase Flash Memory, 1Mb
128K X 8 FLASH 12V PROM, 90 ns, PDIP32
|
http://
CATALYST[Catalyst Semiconductor]
ON SEMICONDUCTOR
|
| MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PDIP32
Switch Actuator; For Use With:18 Series Switches; Accessory Type:Spring Lever Actuator RoHS Compliant: Yes
IC DRIVER 1/2BRDG LOW SIDE 16DIP
DIODE SCHTTKY 150V 2X30A TO247AD
|
Macronix International Co., Ltd.
|
| IS28F020-120PL IS28F020-120PLI IS28F020-120T IS28F |
262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
CAP 33UF 6V 20% TANT SMD-3216-18 TR-7
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| 5962-9089909MUX MD28F010-12 |
128K X 8 FLASH 12V PROM, 90 ns, CDFP
128K X 8 FLASH 12V PROM, 120 ns, CDIP32
|
INTEL CORP
|
| DPZ512X16II3-20C DPZ512X16IY3-20C DPZ512X16IH3-20C |
512K X 16 FLASH 12V PROM MODULE, 200 ns, QIP48 HERMETIC SEALED, CERAMIC, STRAIGHT, MODULE, SLCC-48
512K X 16 FLASH 12V PROM MODULE, 200 ns, CQCC48 HERMETIC SEALED, CERAMIC, LEADLESS, MODULE, SLCC-48
512K X 16 FLASH 12V PROM MODULE, 200 ns, QFP48 HERMETIC SEALED, CERAMIC, GULLWING, MODULE, SLCC-48
512K X 16 FLASH 12V PROM MODULE, 200 ns, PGA50 HERMETIC SEALED, CERAMIC, MODULE, SLCC, PGA-50
|
Twilight Technology, Inc.
|
| SST29EE512-70-4I-EHE SST29EE512-70-4C-EHE SST29EE5 |
512 Kbit (64K x8) Page-Write EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Write EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
http://
Silicon Storage Technology, Inc.
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
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