| PART |
Description |
Maker |
| MX28F1000PRC-90-C4 MX28F1000PQC-90-C4 MX28F1000PTC |
128K X 8 FLASH 12V PROM, 90 ns, PDSO32 PLASTIC, REVERSE, TSOP1-32
128K X 8 FLASH 12V PROM, 90 ns, PQCC32 PLASTIC, LCC-32
128K X 8 FLASH 12V PROM, 90 ns, PDSO32 PLASTIC, TSOP1-32
128K X 8 FLASH 12V PROM, 90 ns, PDIP32 0.600 INCH, PLASTIC, DIP-32
128K X 8 FLASH 12V PROM, 150 ns, PDSO32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| AM28F512A-120JEB AM28F512A-120PEB AM28F512A-120FEB |
Divide-By-Twelve Decade Counter 14-PDIP 0 to 70
Divide-By-Twelve Decade Counter 14-SOIC 0 to 70
Quadruple 2-Input Positive-NAND Gates 14-SOIC -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SO -40 to 85
Quadruple 2-Input Positive-Nor Gates 14-TVSOP -40 to 85
4-Bit Binary Counters 14-SO 0 to 70
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Quadruple 2-Input Positive-Nor Gates 14-TSSOP -40 to 85 2正输入或非门 14-TSSOP封装40℃到85
Hex Inverters 14-SSOP -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-TVSOP -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-SO -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
4-Bit Binary Counters 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32
Quadruple 2-Input Positive-NAND Gates 14-TVSOP -40 to 85 64K X 8 FLASH 12V PROM, 200 ns, PDSO32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 64K X 8 FLASH 12V PROM, 120 ns, PQCC32
Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-SOIC -40 to 85 64K X 8 FLASH 12V PROM, 90 ns, PDIP32
Quadruple 2-Input Positive-Nor Gates 14-SO -40 to 85 64K X 8 FLASH 12V PROM, 70 ns, PQCC32
Quadruple 2-Input Positive-Nor Gates 14-SOIC -40 to 85
|
Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
|
| M28F220-90M1TR M28F220-90M6TR -M28F220 STMICROELEC |
256K X 8 FLASH 12V PROM, 90 ns, PDSO44
2Mbit (256Kb x8 or 128Kb x16, Boot Block) Flash Memory(2Mb???瀛???ī
256K X 8 FLASH 12V PROM, 70 ns, PDSO44
|
STMICROELECTRONICS
|
| M28F1001-12C313 M28F1001-12C113 M28F1001-12C312 M2 |
128K X 8 FLASH 12V PROM, 120 ns, PQCC32 PLASTIC, LCC-32
128K X 8 FLASH 12V PROM, 150 ns, CDIP32
128K X 8 FLASH 12V PROM, 150 ns, PQCC32
128K X 8 FLASH 12V PROM, 120 ns, CDIP32
|
ST Microelectronics
STMICROELECTRONICS
|
| 5962-9089909MUX MD28F010-12 |
128K X 8 FLASH 12V PROM, 90 ns, CDFP
128K X 8 FLASH 12V PROM, 120 ns, CDIP32
|
INTEL CORP
|
| M25P05-AVMN6TP M25P05-AVDW6TP M25P05-AVDW6P M25P05 |
64K X 8 FLASH 2.7V PROM, PDSO8 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
64K X 8 FLASH 2.7V PROM, PDSO8 ROHS COMPLIANT, TSSOP-8
|
ST Microelectronics
STMICROELECTRONICS
|
| M28V161-100N1R M28V161-150M1R M28V161-150N1R M28V1 |
2M X 8 FLASH 12V PROM, 100 ns, PDSO48 12 X 20 MM, PLASTIC, REVERSE, TSOP-48
2M X 8 FLASH 12V PROM, 150 ns, PDSO44 0.525 INCH, PLASTIC, SO-44
2M X 8 FLASH 12V PROM, 150 ns, PDSO48 12 X 20 MM, PLASTIC, REVERSE, TSOP-48
2M X 8 FLASH 12V PROM, 120 ns, PDSO48 12 X 20 MM, PLASTIC, REVERSE, TSOP-48
2M X 8 FLASH 12V PROM, 100 ns, PDSO44 0.525 INCH, PLASTIC, SO-44
2M X 8 FLASH 12V PROM, 120 ns, PDSO44 0.525 INCH, PLASTIC, SO-44
|
ST Microelectronics
|
| DPZ512X16II3-20C DPZ512X16IY3-20C DPZ512X16IH3-20C |
512K X 16 FLASH 12V PROM MODULE, 200 ns, QIP48 HERMETIC SEALED, CERAMIC, STRAIGHT, MODULE, SLCC-48
512K X 16 FLASH 12V PROM MODULE, 200 ns, CQCC48 HERMETIC SEALED, CERAMIC, LEADLESS, MODULE, SLCC-48
512K X 16 FLASH 12V PROM MODULE, 200 ns, QFP48 HERMETIC SEALED, CERAMIC, GULLWING, MODULE, SLCC-48
512K X 16 FLASH 12V PROM MODULE, 200 ns, PGA50 HERMETIC SEALED, CERAMIC, MODULE, SLCC, PGA-50
|
Twilight Technology, Inc.
|
| S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc.
SPANSION LLC
|
| W29F102P-50 W29F102P-50B W29F102Q-45 W29F102Q-45B |
64K 16 CMOS FLASH MEMORY
64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 70 ns, PQCC44
64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 55 ns, PQCC44
64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 50 ns, PDSO40
64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 70 ns, PDSO40
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| AT49BV512-90TU |
512K, 3V FLASH, TSOP, IND TEMP, GREEN(FLASH) 64K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
|
Atmel, Corp.
|
|
