PART |
Description |
Maker |
MJ802 |
High-Power NPN Silicon Transistor 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS
|
Motorola, Inc. ONSEMI[ON Semiconductor]
|
BUV61 BUV61.MOD |
50 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AE Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD Seme LAB
|
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
2N2230 2N3472 2N2227 2N2229 |
10 A, 50 V, NPN, Si, POWER TRANSISTOR 10 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-63 10 A, 100 V, NPN, Si, POWER TRANSISTOR 10 A, 200 V, NPN, Si, POWER TRANSISTOR
|
|
NS5664 |
5 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-257AA
|
MICROSEMI CORP
|
BUV28 BUV28-QR-B |
10 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-220AB NPN SWITCHING TRANSISTOR
|
SEMELAB LTD Seme LAB
|
BUP52.MODR1 |
70 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AE HERMETIC SEALED, METAL, TO-3, 2 PIN
|
TT electronics Semelab, Ltd.
|
APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
MJW2119310 MJW21194G |
16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W 16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-247
|
ON Semiconductor
|
BUS50_D ON0251 BUS50 |
From old datasheet system 70 AMPERES NPN SILICON POWER TRANSISTOR 125 VOLTS (BVCEO) 350 WATTS 200 V (BVCES)
|
功率晶体 ON Semi Motorola, Inc
|
2N3013 2N3014 2N3009 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
|
Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp]
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