| PART |
Description |
Maker |
| NGD15N41CL-D |
Ignition IGBT 15 Amps, 410 Volts N-Channel DPAK, D2PAK and TO-220
|
ON Semiconductor
|
| BZT52C4V3 BZT52C2V7 BZT52C2V4 BZT52C6V2 BZT52C9V1 |
410 mW Zener Diodes 2.4 to 39 Volts
|
MCC[Micro Commercial Components]
|
| MMBZ5222B MMBZ5235B MMBZ5250B MMBZ5259B MMBZ5240B |
410 mW Zener Diode 2.4 to 39 Volts
|
MCC[Micro Commercial Components]
|
| HMC931LP4E HMC931LP4E1103 |
410° Analog Phase Shifter, 8 - 12 GHz
|
Hittite Microwave Corporation
|
| SIOV-S20K1000 |
RESISTOR, VOLTAGE DEPENDENT, 1465 V, 410 J, THROUGH HOLE MOUNT
|
SIEMENS AG
|
| TD250N TT250N DT250N TT250N06KOF TT250N06KOF-K |
Marketing Information
8 POS OPEN FRAME MOLDED DIP SOCKET
410 A, 600 V, SCR
|
Eupec
List of Unclassifed Manufacturers
ETC
Electronic Theatre Controls, Inc.
|
| DT210N TT210N TD210N14KOF |
Netz-Thyristor-Modul Phase Control Thyristor Module
410 A, 1400 V, SCR
|
eupec GmbH
INFINEON TECHNOLOGIES AG
|
| EZ-410 |
EZ-410 is composed of an InAs Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystem...
|
| SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| SUP65P06-20 SUB65P06-20 |
From old datasheet system
P-Channel Enhancement-Mode Trans
P-Channel 60-V (D-S), 175C MOSFET
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,65A I(D),TO-220AB
P-Channel MOSFET
30V N-Channel PowerTrench MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology Inc
Vishay Intertechnology,Inc.
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
