PART |
Description |
Maker |
LTO030F0.01OHMJTE3 LTO030F0.02OHMJTE3 LTO030F0.03O |
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.01 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.02 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.03 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.022 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.033 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.039 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.012 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.043 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.056 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.018 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.027 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.062 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.024 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.051 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.036 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.013 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.047 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.011 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.016 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
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Vishay Intertechnology, Inc.
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IRFIZ34N-004 IRFIZ46N-002 IRFIZ46N-029 IRFIZ46N-02 |
19 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 31 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 13 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 28 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 2.1 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 21 A, 60 V, 0.042 ohm, N-CHANNE 28 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 4.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Bourns, Inc. JST Mfg. Co., Ltd. Vishay Intertechnology, Inc. Austin Semiconductor, Inc
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RFD3055 RFD3055SM RFP3055 FN3648 |
12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs 12A 60V 0.150 Ohm N-Channel Power MOSFETs From old datasheet system
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INTERSIL[Intersil Corporation]
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RFH25P08 RFK25P08 RFK25P10 RFH25P10 |
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs 25 A, 80 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-218AC -25A/ -100V and -80V/ 0.150 Ohm/ P-Channel Power MOSFETs -25A -100V and -80V 0.150 Ohm P-Channel Power MOSFETs
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Intersil, Corp. INTERSIL[Intersil Corporation]
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HUF75823D3S HUF75823D3 |
14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET 14A 150V 0.150 Ohm N-Channel UltraFET Power MOSFET 14A, 150V, 0.150 Ohm, N-Channel, UltraFETPower MOSFET
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FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
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S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2) MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L) MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
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Spansion Inc. Spansion, Inc. SPANSION LLC
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2SK1088-MR |
9 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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FUJI ELECTRIC CO LTD
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RJK1525DPE-LE |
25 A, 150 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET LDPAK-3
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NXP Semiconductors N.V.
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IRFB23N15D |
23 A, 150 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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TCJ-5.5-A TCJ-5.5-B |
150 Ohm Twinax Cable Dual Gigabit Transformers
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Nuvotem Talema
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