| PART |
Description |
Maker |
| UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9J |
Pch enhancement MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开
10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8
|
NEC Corp.
NEC, Corp.
Lattice Semiconductor, Corp.
|
| MMSF10N02ZR2 |
10000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET CASE 751-07, SOP-8
|
ON Semiconductor
|
| MIC94030 MIC94030BM4 MIC94031BM4 4030B MIC94031 |
TinyFET P-Channel MOSFET(TinyFET???P娌??澧?己??OS?烘?搴??)
TinyFETP-Channel MOSFET Preliminary Information TinyFETP沟道MOSFET的初步信
10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
TinyFET P-Channel MOSFET(TinyFET技P沟道增强型MOS场效应管)
TinyFET P-Channel MOSFET Preliminary Information
TinyFET⑩ P-Channel MOSFET Preliminary Information
TinyFET?/a> P-Channel MOSFET Preliminary Information
|
Micrel Semiconductor, Inc.
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| NE529F NE529H |
COMPARATOR, 10000 uV OFFSET-MAX, CDIP14
COMPARATOR, 10000 uV OFFSET-MAX, MBCY10
|
NXP SEMICONDUCTORS
|
| LT10000-S |
Current Transducer LT 10000-S
|
LEM[LEM]
|
| BYX101GAMO |
0.4 A, 10000 V, SILICON, SIGNAL DIODE
|
NXP SEMICONDUCTORS
|
| LM201N |
OP-AMP, 10000 uV OFFSET-MAX, PDIP8
|
|
| HMC611LP4E HMC611LP409 |
60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz
|
http://
Hittite Microwave Corporation
|
| SDS0402BL-103M-S |
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR, SMD
|
YAGEO CORP
|
| 715C10KTD8010KVDC8000PF/-20N4700 |
CAPACITOR, CERAMIC, 10000 V, N4700, 0.008 uF, CHASSIS MOUNT
|
Vishay Intertechnology, Inc.
|
|
